| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SC-88-5 |
| Polarity | NPN, PNP |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Base) | 50.0 V |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 35 @5mA, 10V |
| hFE Max | 35 |
| Input Power (Max) | 150 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The npn and PNP UMC3NT1G digital transistor from ON Semiconductor is your solution. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a dual common base and collector configuration.
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