| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-563 |
| Drain to Source Resistance (on) (Rds) | 7 Ω |
| Polarity | Dual N |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Minimum Packing Quantity | 8000 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment Applications Interfacing, switching (30V, 100mA)
ROHM Semiconductor
4 Pages / 0.07 MByte
ROHM Semiconductor
4 Pages / 0.08 MByte
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