| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-553 |
| Polarity | NPN+PNP |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 20 |
| TYPE | DESCRIPTION |
|---|
| Minimum Packing Quantity | 8000 |
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary devices are housed in the SOT¿553 package which is ideal for low power surface mount applications where board space is at a premium.
●Features
●---
● |
● Simplifies Circuit Design
● Reduces Board Space
● Reduces Component Count
● Available in 8 mm, 7 inch Tape and Reel
● These are Pb-Free Devices
ON Semiconductor
11 Pages / 0.09 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.16 MByte
ON Semiconductor
SOT-553 NPN+PNP 50V 100mA
ON Semiconductor
SOT-553 NPN+PNP 50V 100mA
Sullins
CONN EDGE DUAL FMALE 100POS .100
Sullins
CONN EDGE DUAL FMALE 100POS .100
Sullins
CONN EDGE DUAL FMALE 100POS .100
Sullins
CONN EDGE DUAL FMALE 100POS .100
Sullins
Conn Edge Dual Fmale 100POS .100
Sullins
Conn Edge Dual Fmale 100POS .100
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