F11NM60N Datasheet PDF - ST Microelectronics

Description

●This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

●General features

●■ 100% avalanche tested

●■ Low input capacitance and gate charge

●■ Low gate input resistancel

●Applications

●■ Switching application