| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Drain to Source Voltage (Vds) | 75 V |
| Input Capacitance (Ciss) | 5000pF @25V(Vds) |
| Input Power (Max) | 310 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Description
●This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●■ 100% avalanche tested
●Applications
●■ Switching application
ST Microelectronics
18 Pages / 0.48 MByte
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