TYPE | DESCRIPTION |
---|
Case/Package | AG-EASY1B-1 |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Capacitance (Cies) | 1.65nF @25V |
Input Power (Max) | 115 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● Low Switching Losses
● Trench IGBT 3
● V(CEsat) with positive Temperature Coefficient
● Low V(CEsat)
● Al(2)O(3) Substrate with Low Thermal Restistance
● Compact Design
● Solder Contact Technology
● Rugged mounting due to integrated mounting clamps
●Benefits:
● Compact module concept
● Optimized customer’s development cycle time and cost
● Configuration flexibility
Infineon
10 Pages / 0.78 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
Trans IGBT Module N-CH 600V 39A 19Pin EASY1B-1
Infineon
EasyPIM™ 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC.
Infineon
IGBT Modules IGBT 600V 30A
Infineon
Trans IGBT Module N-CH 600V 39A 19Pin EASY1B
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.