| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 320 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 11A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Operating Temperature | -55℃ ~ 150℃ |
The FCB11N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 40nC)
● Low effective output capacitance (Coss.eff = 95pF)
● 100% avalanche tested
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