| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-263 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Power Dissipation | 208 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The FCB20N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 75nC)
● Low effective output capacitance (Coss.eff = 165pF)
● 100% avalanche tested
ON Semiconductor
8 Pages / 0.42 MByte
ON Semiconductor
6 Pages / 1.06 MByte
Eaton Bussmann
TYPE 2-20A-FORD OE # D9AB-145
Cooper Bussmann
TYPE 2-20A-FORD OE # D9AB-145
Fairchild
FAIRCHILD SEMICONDUCTOR FCB20N60TM Power MOSFET, N Channel, 20A, 600V, 0.15Ω, 10V, 5V
Fairchild
FAIRCHILD SEMICONDUCTOR FCB20N60FTM Power MOSFET, N Channel, 20A, 600V, 0.15Ω, 10V, 5V
TE Connectivity
RELAY, MID-RANGE, 28VDC, 5A, DPDT, M83536/2-024M
TE Connectivity
RELAY, MID-RANGE, 28VDC, 5A, DPDT, M83536/2-028M
ON Semiconductor
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK, 800-REEL
TE Connectivity
Electromechanical Relay DPDT 5A 28VDC 500Ω Flange Mount
Fairchild
FAIRCHILD SEMICONDUCTOR FCB20N60 Power MOSFET, N Channel, 20A, 600V, 150mohm, 10V, 5V
TE Connectivity
Electromechanical Relay DPDT 5A 12VDC Flange Mount
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