| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 20.0 A |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 3.08 nF |
| Gate Charge | 98.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 3080pF @25V(Vds) |
| Input Power (Max) | 208 W |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 208W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Description
●SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
●This advanced technology has been tailored to minimize conduction loss, provide superior switching performance,and withstand extreme dv/ dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency .
●Features
●• 650V @ TJ =150°C
●• Typ.Rds(on) =0.15:
●• Fast RecoveryType (trr =160ns)
●• Ultra low gate charge (typ.Qg=75nC)
●• Low effective output capacitance ( typ.Coss.eff =165pF)
●• 100% avalanche tested
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