| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 600 V |
| Current Rating | 7.00 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 530 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 83 W |
| Input Capacitance | 920 pF |
| Gate Charge | 30.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 920pF @25V(Vds) |
| Input Power (Max) | 83 W |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 83W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●SuperFET is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
●Features
●• 650V @TJ= 150°C
●• Typ. Rds(on)=0.53Ω
●• Ultra low gate charge (typ. Qg=23nC)
●• Low effective output capacitance (typ. Coss.eff=60pF)
●• 100% avalanche tested
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DESIGN/PROCESS CHANGE NOTIFICATION
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