| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.33 Ω |
| Power Dissipation | 92.6 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 735 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 9.6 ns |
| Input Capacitance (Ciss) | 735pF @100V(Vds) |
| Input Power (Max) | 92.6 W |
| Fall Time | 11.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 92.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCD9N60NTM is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 17.8nC)
● Low effective output capacitance (Coss.eff = 122pF)
● 100% avalanche tested
ON Semiconductor
10 Pages / 0.72 MByte
ON Semiconductor
7 Pages / 0.87 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCD9N60NTM Power MOSFET, N Channel, 9A, 600V, 0.33Ω, 10V, 3V
ON Semiconductor
Trans MOSFET N-CH 600V 9A 3Pin(2+Tab) DPAK T/R
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