| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.108 Ω |
| Polarity | N-Channel |
| Power Dissipation | 216 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 25A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 3352pF @100V(Vds) |
| Input Power (Max) | 216 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 216W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCH25N60N is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 57nC)
● Low effective output capacitance (Coss.eff = 262pF)
● 100% avalanche tested
Fairchild
2 Pages / 0.07 MByte
Fairchild
8 Pages / 0.27 MByte
Fairchild
1 Pages / 0.44 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCH25N60N Power MOSFET, N Channel, 25A, 600V, 0.108Ω, 10V, 2V
ON Semiconductor
MOSFET N-CH 600V 25A TO-247
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