| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.244 Ω |
| Polarity | N-Channel |
| Power Dissipation | 116 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 10.6 ns |
| Input Capacitance (Ciss) | 1765pF @100V(Vds) |
| Input Power (Max) | 116 W |
| Fall Time | 9.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 116W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCP13N60N is a N-channel SupreMOS® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 30.4nC)
● Low effective output capacitance (Coss.eff = 145pF)
● 100% avalanche tested
Fairchild
10 Pages / 0.66 MByte
Fairchild
12 Pages / 0.76 MByte
Fairchild
1 Pages / 0.09 MByte
KERSEMI
MOSFET N-CH 600V 13A TO220
Fairchild
FAIRCHILD SEMICONDUCTOR FCP13N60N Power MOSFET, N Channel, 13A, 600V, 0.244Ω, 10V, 2V
ON Semiconductor
MOSFET N-CH 600V 13A TO220
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