| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 4.6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 890 mW |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 380 mA |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 195pF @25V(Vds) |
| Input Power (Max) | 890 mW |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 890mW (Ta), 2.08W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Ammo Pack |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQN1N50CTA is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 4.9nC Typical low gate charge
● 4.1pF Typical low Crss
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