| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.159 Ω |
| Power Dissipation | 144 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 650 V |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 1350pF @10V(Vds) |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 144000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
SuperFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
●Features | | Benefits
●---|---|---
● | | | | |
● 700 V @ TJ = 150 oC
●| |
● Higher system reliability at low temperature operation
● Ultra Low Gate Charge (Typ. Qg = 33 nC)
●| |
● Lower switching loss
● Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
●| |
● Lower switching loss
● Optimized Capacitance
●| |
● Lower peak Vds and lower Vgs oscillation
● Internal Gate resistance: 7.0 ohm
●| |
● Lower peak Vds and lower Vgs oscillation
● Typ. RDS(on) = 159 mΩ
●| |
● 100% Avalanche Tested
●| |
● RoHS Compliant
●| |
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