| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220F-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.22 Ω |
| Polarity | N-Channel |
| Power Dissipation | 36 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 15A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 2500pF @25V(Vds) |
| Input Power (Max) | 36 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 36W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 16.07 mm |
| Size-Height | 16.07 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCPF260N60E is a N-channel SuperFET® II easy-drive high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 48nC)
● Low effective output capacitance (Coss.eff = 129pF)
● 100% avalanche tested
Fairchild
10 Pages / 0.81 MByte
Fairchild
11 Pages / 0.86 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15A, 600V, 0.22Ω, 10V, 2.5V
ON Semiconductor
MOSFET N CH 600V 15A TO-220F
Fairchild
Trans MOSFET N-CH 600V 15A 3Pin TO-220F Tube
ON Semiconductor
MOSFET N CH 600V 15A TO-220F
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
