| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 3.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.56 W |
| Gain Bandwidth Product | 3 MHz |
| Breakdown Voltage (Collector to Base) | 100 V |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 3A |
| hFE Min | 10 @3A, 4V |
| Input Power (Max) | 1.56 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 15 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | 150℃ (TJ) |
The MJD31CTF is a NPN Epitaxial Silicon Transistor designed for general-purpose power and switching, such as output or driver stages in applications.
● General purpose amplifier
● Low-speed switching applications
● Lead formed for surface-mount applications
● Electrically similar to popular TIP31 and TIP31C
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