TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Polarity | N-CH |
Power Dissipation | 110 W |
Input Capacitance | 2200 pF |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 80A |
Rise Time | 50 ns |
Input Capacitance (Ciss) | 2200pF @25V(Vds) |
Input Power (Max) | 110 W |
Fall Time | 11.5 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.6 mm |
Size-Width | 6.2 mm |
Size-Height | 2.4 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Increase the current or voltage in your circuit with this STD60N55F3 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet iii technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
ST Microelectronics
20 Pages / 0.6 MByte
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