TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-251-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.82 Ω |
Polarity | N-Channel |
Power Dissipation | 52 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 4.5A |
Rise Time | 5.3 ns |
Input Capacitance (Ciss) | 710pF @25V(Vds) |
Input Power (Max) | 52 W |
Fall Time | 11.9 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 52W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 6.8 mm |
Size-Width | 2.5 mm |
Size-Height | 6.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
●Features
●• 675V @TJ = 150oC
●• Max. RDS(on) = 900mΩ
●• Ultra Low Gate Charge (Typ. Qg = 13nC)
●• Low Effective Output Capacitance (Typ. Coss.eff = 49pF)
●• 100% Avalanche Tested
●• ESD Improved Capacity
Fairchild
10 Pages / 0.79 MByte
Fairchild
9 Pages / 0.59 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCU900N60Z Power MOSFET, N Channel, 4.5A, 600V, 0.82Ω, 10V, 2.5V
ON Semiconductor
MOSFET N CH 600V 4.5A IPAK
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