TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 150 V |
Current Rating | 100 mA |
Case/Package | SOT-89-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1 W |
Gain Bandwidth Product | 100 MHz |
Breakdown Voltage (Collector to Emitter) | 150 V |
Continuous Collector Current | 1A |
hFE Min | 100 @1mA, 10V |
Input Power (Max) | 1 W |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 4.5 mm |
Size-Width | 2.5 mm |
Size-Height | 1.5 mm |
Operating Temperature | -65℃ ~ 150℃ |
Jump-start your electronic circuit design with this versatile NPN FCX495TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 7 V.
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