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FD150R12RT4HOSA1
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FD150R12RT4HOSA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Case Package:AG-34MM-1
Description:Trans IGBT Module N-CH 1200V 150A 790000mW 5Pin 34MM-1 Tray
Documentation:FD150R12RT4HOSA1 Datasheet (10 Pages)FD150R12RT4HOSA1 User Reference Manual Guide (36 Pages)FD150R12RT4HOSA1 Application Note (40 Pages)
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FD150R12RT4HOSA1 Datasheet PDF (10 Pages)
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FD150R12RT4HOSA1 Specifications

TYPEDESCRIPTION
Number of Pins5 Pin
Case/PackageAG-34MM-1
Power Dissipation790000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)9.3nF @25V
Input Power (Max)790 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)790000 mW
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FD150R12RT4HOSA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTray
Operating Temperature-40℃ ~ 150℃ (TJ)
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FD150R12RT4HOSA1 Documents

FD150R12RT4HOSA1 Datasheet
Infineon
10 Pages / 0.65 MByte
FD150R12RT4HOSA1 User Reference Manual Guide
Infineon
36 Pages / 3.45 MByte
FD150R12RT4HOSA1 Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
FD150R12RT4HOSA1 Application Note
Infineon
40 Pages / 6.73 MByte

FD150R12RT4 Documents

FD150R12RT4 Datasheet PDF
Infineon
INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150A, 1.75V, 790W, 1.2kV
FD150R12RT4HOSA1 Datasheet PDF
Infineon
Trans IGBT Module N-CH 1200V 150A 790000mW 5Pin 34MM-1 Tray
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