| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Polarity | N-Channel |
| Power Dissipation | 270 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 24A |
| Rise Time | 108 ns |
| Input Capacitance (Ciss) | 4150pF @25V(Vds) |
| Input Power (Max) | 270 W |
| Fall Time | 86 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 270W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDA24N50 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 65nC Typical low gate charge
● 35pF Typical low Crss
● 100% Avalanche tested
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