| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 49 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 392 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 59.0 A |
| Rise Time | 480 ns |
| Input Capacitance (Ciss) | 4020pF @25V(Vds) |
| Input Power (Max) | 392 W |
| Fall Time | 170 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 392W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.2 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDA59N25 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 63nC Typical low gate charge
● 70pF Typical low Crss
● 100% Avalanche tested
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