FDB2532 Datasheet PDF - Fairchild

Manufacturer:	Fairchild
Category:	MOSFETs
Case Package:	TO-263-3
Description:	Power Field-Effect Transistor, 8A I(D), 150V, 0.016Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3Pin
Documentation:	FDB2532 Datasheet (13 Pages)Package Outline Dimension on11 Page 12 Page Part Numbering System on2 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

FDB2532 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Voltage Rating (DC)	150 V
Current Rating	79.0 A
Case/Package	TO-263-3
Power Rating	310 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	310 W
Threshold Voltage	4 V
Input Capacitance	5.87 nF
Gate Charge	82.0 nC
Drain to Source Voltage (Vds)	150 V
Breakdown Voltage (Drain to Source)	150 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	79.0 A
Rise Time	30 ns
Input Capacitance (Ciss)	5870pF @25V(Vds)
Input Power (Max)	310 W
Fall Time	17 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	310W (Tc)