| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 0.24 Ω |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 300 V |
| Breakdown Voltage (Drain to Source) | 300 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 105 ns |
| Input Capacitance (Ciss) | 1060pF @25V(Vds) |
| Input Power (Max) | 140 W |
| Fall Time | 75 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 140 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDB14N30TM is an UniFET™ N-channel high voltage MOSFET produced from Fairchild Semiconductor"s family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
● Improved dV/dt capability
● 100% Avalanche tested
● 18nC Typical low gate charge
● 17pF Typical low Crss
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