| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 50.0 A |
| Case/Package | TO-263-3 |
| Power Rating | 260 W |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.0363 Ω |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 7.28 nF |
| Gate Charge | 101 nC |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | 250 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 252 ns |
| Input Capacitance (Ciss) | 7280pF @25V(Vds) |
| Input Power (Max) | 260 W |
| Fall Time | 154 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDB2710 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handing capability
Fairchild
8 Pages / 1.12 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
1 Pages / 0.07 MByte
Fairchild
7 Pages / 0.87 MByte
Fairchild
1 Pages / 0.14 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
