| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 4.30 A |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 55 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 2.2 V |
| Input Capacitance | 650 pF |
| Gate Charge | 12.5 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 4.30 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 650pF @25V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC5612 is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● High performance Trench technology for extremely low RDS (ON)
● 12.5nC Typical low gate charge
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