| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.026 Ω |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 1330pF @10V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
●Features
●---
● |
● -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V
● Low gate charge
● High performance trench technology for extremely low RDS(on)
● SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)
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