| TYPE | DESCRIPTION |
|---|
| Case/Package | TSOT-23-6 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
●Features
●---
● |
● -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V
● Low gate charge
● High performance trench technology for extremely low RDS(on)
● SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)
ON Semiconductor
6 Pages / 0.24 MByte
ON Semiconductor
9 Pages / 0.45 MByte
ON Semiconductor
17 Pages / 2.07 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
19 Pages / 1.07 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC608PZ MOSFET Transistor, P Channel, 5.8A, -20V, 0.026Ω, -4.5V, -1V
ON Semiconductor
MOSFET P-CH 20V 5.8A SSOT-6
ON Semiconductor
-20V P-Channel 2.5V PowerTrench® Specified MOSFET
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