| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.90 A |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.127 Ω |
| Polarity | P-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 441 pF |
| Gate Charge | 3.00 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | -1.90 A |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 441pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.96 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC6306P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
Fairchild
6 Pages / 0.12 MByte
Fairchild
8 Pages / 0.09 MByte
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6 Pages / 1.89 MByte
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6 Pages / 0.05 MByte
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8 Pages / 0.23 MByte
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1 Pages / 0.14 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6306P Dual MOSFET, Dual P Channel, 1.9A, -20V, 0.127Ω, -4.5V, -900mV
ON Semiconductor
Trans MOSFET P-CH 20V 1.9A 6Pin SuperSOT T/R
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