TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | -50.0 V |
Current Rating | -220 mA |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 1.2 Ω |
Polarity | P-Channel, Dual P-Channel |
Power Dissipation | 960 mW |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | -50.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | -340 mA |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 66pF @25V(Vds) |
Input Power (Max) | 700 mW |
Fall Time | 1 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 0.96 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NDC7003P is a PowerTrench® dual P-channel MOSFET produced using Trench technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
● Low gate charge
● Fast switching speed
● High performance Trench technology for low RDS (ON)
● Small footprint
● Low profile
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