| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 120 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 490 mW |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 2A |
| hFE Min | 120 @50mA, 2V |
| hFE Max | 150 |
| Input Power (Max) | 490 mW |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 710 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1.01 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
If you require a general purpose BJT that can handle high voltages, then the PNP NSS1C200LT1G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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