FDC6327 Datasheet PDF - Fairchild

General Description

●These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor"s advanced

●PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate

●charge for superior switching performance.

●Features

●• N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V

●                              RDS(on) = 0.12Ω @ VGS = 2.5V

●• P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V

●                                RDS(on)= 0.25Ω @ VGS = -2.5V

●• Fast switching speed.

●• Low gate charge.

●• High performance trench technology for extremely low RDS(ON).

●• SuperSOTTM -6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

●Applications

●• DC/DC converter

●• Load switch

●• Motor driving