| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.069 Ω |
| Power Dissipation | 960 mW |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Input Capacitance (Ciss) | 325pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
●Features
●---
● |
● N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V, RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @VGS= -4.5V, RDS(on) = 0.25Ω @ V GS = -2.5V
● Fast switching speed.
● Low gate charge.
● High performance trench technology for extremelylow RDS(ON) .
● SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).
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