TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Current Rating | 2.70 A |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.069 Ω |
Polarity | N-Channel, P-Channel, Dual N-Channel, Dual P-Channel |
Power Dissipation | 960 mW |
Threshold Voltage | 900 mV |
Input Capacitance | 315 pF |
Gate Charge | 2.85 nC |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | ±8.00 V |
Continuous Drain Current (Ids) | 2.70 A, 1.90 A |
Rise Time | 14.0 ns |
Input Capacitance (Ciss) | 325pF @10V(Vds) |
Input Power (Max) | 700 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 0.96 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC6327C is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and DC-to-DC converter applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
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