TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.095 Ω |
Power Dissipation | 960 mW |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Input Capacitance (Ciss) | 282pF @15V(Vds) |
Input Power (Max) | 700 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 960 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC6333C is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with DC-to-DC converter, load switch and LCD display inverter applications.
● Low gate charge
● Small footprint
● Low profile
● High performance Trench technology for extremely low RDS (ON)
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
10 Pages / 0.2 MByte
Fairchild
MOSFET N/P-CH 30V 2.5A/2A SSOT6
ON Semiconductor
MOSFET N/P-CH 30V 2.5A/2A SSOT6
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