| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.039 Ω |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 800 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 1160pF @10V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
The FDC638P is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
● High performance Trench technology for extremely low RDS (ON)
● 10nC Typical low gate charge
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