TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -4.50 A |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.039 Ω |
Polarity | P-Channel |
Power Dissipation | 1.6 W |
Threshold Voltage | 1 V |
Input Capacitance | 890 pF |
Gate Charge | 9.00 nC |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Gate to Source) | ±12.0 V |
Continuous Drain Current (Ids) | 4.50 mA |
Rise Time | 9 ns |
Input Capacitance (Ciss) | 890pF @10V(Vds) |
Input Power (Max) | 800 mW |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.6W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC640P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V).
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
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