| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TSOT-23-6 |
| Drain to Source Resistance (on) (Rds) | 23.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.6 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 6.30 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 830pF @15V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.6 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Single N-Channel, Logic Level, PowerTrench TM MOSFET General Description This N-Channel Logic LevelMOSFET is produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications whe 6.3 A, 30 V. RDS(ON) = 0.027 W @ VGS= 10 V RDS(ON) = 0.035 W @ VGS= 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOT TM-6 package: small footprint (72% smaller than SO-8); low p
Fairchild
4 Pages / 0.3 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
4 Pages / 0.19 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC655BN MOSFET Transistor, N Channel, 6.3A, 30V, 0.021Ω, 10V, 1.9V
ON Semiconductor
MOSFET Transistor, N Channel, 6.3A, 30V, 0.021Ω, 10V, 1.9V
Fairchild
MOSFET N-CH 30V 6.3A 6-SSOT
ON Semiconductor
MOSFET N-CH 30V 6.3A 6-SSOT
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
