TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | TO-252-5 |
Number of Channels | 2 Channel |
Drain to Source Resistance (on) (Rds) | 24 mΩ |
Polarity | N+P |
Power Dissipation | 3.1 W |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 9A/6.5A |
Input Capacitance (Ciss) | 1000pF @20V(Vds) |
Input Power (Max) | 1.3 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Fairchild
11 Pages / 0.78 MByte
Fairchild
Power Field-Effect Transistor, 20A I(D), 40V, 0.024Ω, 2Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-252, DPAK-4
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