| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0178 Ω |
| Polarity | N-Channel |
| Power Dissipation | 54 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 8A |
| Rise Time | 2.3 ns |
| Input Capacitance (Ciss) | 1540pF @50V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 2.3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1W (Ta), 54W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDD86102LZ is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level.
● Very low Qg and Qgd compared to competing Trench technologies
● Fast switching speed
● 100% UIL tested
● >6kV Typical HBM ESD protection level
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