| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 1233pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDS4935A is a dual P-channel PowerTrench® MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V). It is suitable for load-switch and battery protection applications.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● -7A Continuous drain current
● -30A Pulsed drain current
ON Semiconductor
24 Pages / 0.43 MByte
ON Semiconductor
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ON Semiconductor
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