| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 4.50 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 88 W |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 35.0 A |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 2610pF @13V(Vds) |
| Input Power (Max) | 88 W |
| Fall Time | 57 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 88W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
General Description
●This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
●Features
● Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A
● Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A
● Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
● Low gate resistance
● Avalanche rated and 100% tested
● RoHS Compliant
●Application
● Vcore DC-DC for Desktop Computers and Servers
● VRM for Intermediate Bus Architecture
Fairchild
7 Pages / 0.5 MByte
Fairchild
18 Pages / 0.94 MByte
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