| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | 4-Mini-Flat |
| Rise/Fall Time | 3 µs |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Forward Voltage | 1.4V (Max) |
| Power Dissipation | 150 mW |
| Rise Time | 3 µs |
| Isolation Voltage | 3750 Vrms |
| Forward Current | 50 mA |
| Output Voltage (Max) | 80 V |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 50 mA |
| Fall Time | 3 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 100℃ |
The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27mm.
●Features
●---
● |
● Compact 4-pin package - (2.4 mm maximum standoff height)
● Half pitch leads for optimum board space savings
● High current transfer ratio: 50-600%
● Available in tape and reel quantities of 2500
● CSA (File #1201524), UL (file #E90700) and VDE (file #136480) certified
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9 Pages / 0.58 MByte
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50 Pages / 1.22 MByte
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