| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -2.00 A |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.084 Ω |
| Polarity | P-Channel |
| Power Dissipation | 750 mW |
| Input Capacitance | 477 pF |
| Gate Charge | 5.00 nC |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 477pF @6V(Vds) |
| Input Power (Max) | 480 mW |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 750mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDG330P is a 1.8V specified P-channel MOSFET produced using Fairchild"s advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount package
Fairchild
5 Pages / 0.14 MByte
Fairchild
7 Pages / 0.24 MByte
Fairchild
5 Pages / 0.14 MByte
Fairchild
Trans MOSFET P-CH 12V 2A 6Pin SC-70 T/R
ON Semiconductor
Small Signal Field-Effect Transistor, 2A I(D), 12V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
