| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -600 mA |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.3 Ω |
| Polarity | P-Channel |
| Power Dissipation | 300 mW |
| Input Capacitance | 114 pF |
| Gate Charge | 1.40 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 600 mA |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 114pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 1.7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDG6306P is a dual P-channel MOSFET rugged gate version advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use with battery management and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount-package
● ±12V Gate to source voltage
● -0.6A Continuous drain current
● -2A Pulsed drain current
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