| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -500 mA |
| Case/Package | SC-70-6 |
| Number of Channels | 2 Channel |
| Drain to Source Resistance (on) (Rds) | 780 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 0.3 W |
| Input Capacitance | 83.0 pF |
| Gate Charge | 860 pC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 500 mA |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 83pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 1 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS Applications • Battery management Features • Very low level gate drive requirements allowing direct operation in 3V circuits • Compact industry standard SC70-6 surface mount package
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