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IXXH100N60C3
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IXXH100N60C3 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 190A 830000mW 3Pin(3+Tab) TO-247AD
Documentation:IXXH100N60C3 Datasheet (7 Pages)
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IXXH100N60C3 Datasheet PDF (7 Pages)
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IXXH100N60C3 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation830 W
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)830 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)830000 mW
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IXXH100N60C3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXXH100N60C3 Documents

IXXH100N60C3 Datasheet
IXYS Semiconductor
7 Pages / 0.16 MByte
IXXH100N60C3 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.16 MByte

IXXH100N60 Documents

IXXH100N60B3 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 220A 830000mW 3Pin(3+Tab) TO-247AD
IXXH100N60C3 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 190A 830000mW 3Pin(3+Tab) TO-247AD
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