| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Power Dissipation | 380 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30V, 25V |
| Input Capacitance (Ciss) | 120pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
The FDG8842CZ is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
● Very small package outline
● Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
ON Semiconductor
8 Pages / 0.44 MByte
ON Semiconductor
10 Pages / 0.55 MByte
ON Semiconductor
4 Pages / 0.71 MByte
Fairchild
Trans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6Pin SC-70 T/R
ON Semiconductor
MOSFET, N & P CHANNEL, 30V, .25/0.87Ω, 750mA, SC-70, FULL REEL
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
