| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.037 Ω |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 700 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 2.2 ns |
| Input Capacitance (Ciss) | 500pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 2.3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.4 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDMA1024NZ is a dual P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. It is suitable for use with baseband switch, load switch and DC-to-DC conversion applications.
● Low profile
● Halogen-free
● ±8V Gate to source voltage
● 5A Continuous drain current
● 6A Pulsed drain current
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